2SD750 Silicon NPN Power Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min). Wide Area of Safe Operation. High Current Capability. Minimum Lot-to-Lot.

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Datasheet Specifications

Part number: 2SD750
Manufacturer: INCHANGE
File Size: 207.86 KB
Datasheet: 2SD750-INCHANGE.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for AF high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Pea

2SD750 Distributors

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2SD750 Silicon NPN Power Transistor INCHANGE

INCHANGE 2SD750-like datasheet