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2SD750 - Silicon NPN Power Transistor

2SD750 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min). Wide Area of Safe Operation. High Current Capability. Minimum Lot-to-Lot.

2SD750 Applications

* Designed for AF high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Pea

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Datasheet Details

Part number
2SD750
Manufacturer
INCHANGE
File Size
207.86 KB
Datasheet
2SD750-INCHANGE.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor INCHANGE
INCHANGE 2SD750-like datasheet