2SD753 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD753 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min). High Power Dissipation- : PC= 150W(Max)@TC=25℃. High Current Capability.

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Datasheet Specifications

Part number: 2SD753
Manufacturer: INCHANGE
File Size: 194.99 KB
Datasheet: 2SD753-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Baser Current-Continuous P

2SD753 Distributors

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2SD753 NPN Transistor INCHANGE

INCHANGE 2SD753-like datasheet