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2SD753 - NPN Transistor

2SD753 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD753 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min). High Power Dissipation- : PC= 150W(Max)@TC=25℃. High Current Capability.

2SD753 Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Baser Current-Continuous P

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Datasheet Details

Part number
2SD753
Manufacturer
INCHANGE
File Size
194.99 KB
Datasheet
2SD753-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD753-like datasheet