2SD956 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD956 .
High Breakdown Voltage- : VCBO= 1500V (Min). Low Collector Saturation Voltage- : VCE(sat)= 4. Built-in Damper Diode.

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Datasheet Specifications

Part number: 2SD956
Manufacturer: INCHANGE
File Size: 193.77 KB
Datasheet: 2SD956-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 2.5 A

2SD956 Distributors

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2SD956 NPN Transistor INCHANGE

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