2SD959 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor 2SD959 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Good Linearity of hFE. Low Collector Saturation Voltage : VCE(sat)= 0.

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Datasheet Specifications

Part number: 2SD959
Manufacturer: INCHANGE
File Size: 210.14 KB
Datasheet: 2SD959-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak PC

2SD959 Distributors

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2SD959 NPN Transistor INCHANGE

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