2SD998 Datasheet - INCHANGE

2SD998 - NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) *Good Linearity of hFE *Complement to Type 2SB778 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *High power amplifier applications *Recommend for 45-50W audio frequ.

2SD998-INCHANGE.pdf

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Datasheet Details

Part number:

2SD998

Manufacturer:

INCHANGE

File Size:

205.98 KB

Description:

Npn transistor.

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2SD998 NPN Transistor INCHANGE