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2SD998

NPN Transistor

2SD998 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min)
*Good Linearity of hFE
*Complement to Type 2SB778
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*High power amplifier applications
*Recommend for 45-50W audio frequ.

2SD998 Datasheet (205.98 KB)

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Datasheet Details

Part number:

2SD998

Manufacturer:

INCHANGE

File Size:

205.98 KB

Description:

Npn transistor.

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2SD998 NPN Transistor INCHANGE

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