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2SD998 NPN Transistor

2SD998 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD998 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). Good Linearity of hFE. Complement to Type 2SB778. Minimum Lot-to-Lot vari.

2SD998 Applications

* High power amplifier applications
* Recommend for 45-50W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC

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Datasheet Details

Part number
2SD998
Manufacturer
INCHANGE
File Size
205.98 KB
Datasheet
2SD998-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD998-like datasheet