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2SK3152 N-Channel MOSFET

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Description

isc N-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number
2SK3152
Manufacturer
INCHANGE
File Size
218.81 KB
Datasheet
2SK3152-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* Drain-source on-resistance: RDS(on) ≤ 130mΩ@10V
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* High fast switching Power Supply
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 120 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 10 IDM Drain Current-Single Pulsed 40 PD Total Dissipation @TC=25℃ 25 Tj Max. Operating Juncti

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