Part number:
2SK3199
Manufacturer:
INCHANGE
File Size:
246.94 KB
Description:
N-channel mosfet.
* Drain Current
* ID= 5A@ TC=25℃
* Drain Source Voltage- : VDSS=500V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
* Designed for use in
2SK3199
INCHANGE
246.94 KB
N-channel mosfet.
📁 Related Datasheet
2SK319 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK319
DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Volt.
2SK319 - (2SK319 / 2SK320) SILICON N-CHANNEL MOS FET
(Hitachi Semiconductor)
..
.
2SK3192 - N-Channel MOSFET
(Panasonic Semiconductor)
Power MOSFETs
2SK3192
Silicon N-channel power MOSFET
Unit: mm
(0.7)
■ Features
• Avalanche energy capability guaranteed • High-speed switching • Low.
2SK3199 - Transistor
(Sanken Electric)
2SK3199
Absolute Maximum Ratings
Symbol VDSS VGSS .. ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 500 ± 30 ±5 ± 20 30 (Tc = 25ºC).
2SK310 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK310
DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Volt.
2SK310 - (2SK310 / 2SK311) SILICON N-CHANNEL MOS FET
(Hitachi Semiconductor)
..
.
2SK3101LS - N-Channel Silicon MOSFET
(Sanyo)
Ordering number : ENN7910
2SK3101LS
2SK3101LS
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Features
• Low ON-resistance..
2SK3102-01R - MOSFET / Power MOSFETs
(Fuji Semiconductors)
w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
w
.D
t a
S a
e h
t e
U 4
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
.
