| Image | Manufacturer | P/N | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|---|
 |
Fuji Electric Co Ltd | 2SK899 | 2SK899 | POWER FIELD-EFFECT TRANSISTOR, 18A I(D), 500V, 0.33OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | Quest Components | 3746 | 550 units |
$6.75
|
🛒 Buy Now |
Download Datasheet (229.19 KB)
2SK899
INCHANGE
229.19 KB
N-channel mosfet.
isc N-Channel MOSFET Transistor
DESCRIPTION *Drain Current *ID=18A@ TC=25℃ *Drain Source Voltage-
:.
*Drain Current *ID=18A@ TC=25℃ *Drain Source Voltage-
: VDSS=500V(Min) *Fast Switching Speed *Minimu.
