Datasheet Details
- Part number
- AOT27S60
- Manufacturer
- INCHANGE
- File Size
- 241.42 KB
- Datasheet
- AOT27S60-INCHANGE.pdf
- Description
- N-Channel MOSFET
AOT27S60 Description
isc N-Channel MOSFET Transistor AOT27S60 *.
AOT27S60 Features
* Drain Current
* ID= 27A@ TC=25℃
* Drain Source Voltage-
: VDSS= 600V(Min)
* Static Drain-Source On-Resistance
: RDS(on) = 0.16Ω(Max)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
* DESCRITION
* Be suitable
AOT27S60 Applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
27
A
IDM
Drain Current-Single Pulsed
110
A
PD
Total Dissipation @TC=25℃
357
W
Tj
Max. Operating Junction Temperature
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