AOT27S60 N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor AOT27S60 *.

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Datasheet Specifications

Part number: AOT27S60
Manufacturer: INCHANGE
File Size: 241.42 KB
Datasheet: AOT27S60-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Drain Current
* ID= 27A@ TC=25℃
* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.16Ω(Max)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Be suitable

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 27 A IDM Drain Current-Single Pulsed 110 A PD Total Dissipation @TC=25℃ 357 W Tj Max. Operating Junction Temperature

AOT27S60 Distributors

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AOT27S60 N-Channel MOSFET INCHANGE

INCHANGE AOT27S60-like datasheet