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AOT2N60 N-Channel MOSFET

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Description

isc N-Channel MOSFET Transistor AOT2N60 .
Designed for use in switch mode power supplies and general purpose applications.

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Datasheet Specifications

Part number
AOT2N60
Manufacturer
INCHANGE
File Size
256.60 KB
Datasheet
AOT2N60-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* Drain Current
* ID= 2A@ TC=25℃
* Drain Source Voltage- : VDSS=600V(Min)
* Static Drain-Source On-Resistance : RDS(on) =4.4Ω(Max)
* 100% avalanche tested

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 2 A IDM Drain Current-Single Pluse 8 A PD Total Dissipation @TC=25℃ 74 W TJ Max. Operating Junction Temperature

AOT2N60 Distributors

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