AOT3N60 - N-Channel MOSFET

INCHANGE

AOT3N60 Datasheet Preview — Preview of AOT3N60 PDF

Datasheet Details

Part number	AOT3N60
Manufacturer	INCHANGE
File Size	257.08 KB
Description	N-Channel MOSFET
Datasheet	AOT3N60-INCHANGE.pdf

AOT3N60 Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 2.5 A IDM Drain Current-Single Pluse 8.0 A PD Total Dissipation @TC=25℃ 59.5 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal

Features

Drain Current.
ID= 2.5A@ TC=25℃.
Drain Source Voltage- : VDSS=600V(Min).
Static Drain-Source On-Resistance : RDS(on) =3.5Ω(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Jan 19, 2021 |