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AOT3N60 N-Channel MOSFET

AOT3N60 Description

isc N-Channel MOSFET Transistor AOT3N60 .
Designed for use in switch mode power supplies and general purpose applications.

AOT3N60 Features

* Drain Current
* ID= 2.5A@ TC=25℃
* Drain Source Voltage- : VDSS=600V(Min)
* Static Drain-Source On-Resistance : RDS(on) =3.5Ω(Max)
* 100% avalanche tested

AOT3N60 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 2.5 A IDM Drain Current-Single Pluse 8.0 A PD Total Dissipation @TC=25℃ 59.5 W TJ Max. Operating Junction Tempe

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Datasheet Details

Part number
AOT3N60
Manufacturer
INCHANGE
File Size
257.08 KB
Datasheet
AOT3N60-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE AOT3N60-like datasheet