AOT1100L - N-Channel MOSFET

INCHANGE

AOT1100L Datasheet Preview — Preview of AOT1100L PDF

Datasheet Details

Part number	AOT1100L
Manufacturer	INCHANGE
File Size	254.73 KB
Description	N-Channel MOSFET
Datasheet	AOT1100L-INCHANGE.pdf

AOT1100L Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 130 A IDM Drain Current-Single Pluse 208 A PD Total Dissipation @TC=25℃ 250 W TJ Max.Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal

Features

Drain Current.
ID= 130A@ TC=25℃.
Drain Source Voltage- : VDSS= 100V(Min).
Static Drain-Source On-Resistance : RDS(on) = 12mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Dec 11, 2020 |