AOT5N100 Datasheet - INCHANGE

AOT5N100, N-Channel MOSFET

isc N-Channel MOSFET Transistor

Features

* Drain Current
* ID= 4A@ TC=25℃
* Drain Source Voltage- : VDSS= 1000V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 4.2Ω(Max)
* 100% avalanche tested

Applications

* Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.
Operating Junction Temperature Tstg Storage Tempe

AOT5N100-INCHANGE.pdf