AOTF8T50P Datasheet - INCHANGE

AOTF8T50P, N-Channel MOSFET

isc N-Channel MOSFET Transistor

Features

* Drain Current
* ID=8A@ TC=25℃
* Drain Source Voltage- : VDSS=500V(Min)
* Static Drain-Source On-Resistance : RDS(on) =0.81Ω(Max)
* 100% avalanche tested

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Pluse 32 A PD Total Dissipation @TC=25℃ 38 W TJ Max.
Operating Junction Temperatur

AOTF8T50P-INCHANGE.pdf