BD347 - NPN Transistor
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 3A *Good Linearity of hFE *Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS *Designed for RF power and ge
