BD347 Datasheet - INCHANGE

BD347, NPN Transistor

isc Silicon NPN Power Transistor INCHANGE Semiconductor BD347 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1. Good Lin.

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Datasheet Details

Part number:

BD347

Manufacturer:

INCHANGE

File Size:

180.89 KB

Description:

NPN Transistor

Applications

* Designed for RF power and general-purpose audio amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM C

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BD347 NPN Transistor INCHANGE

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