Datasheet Details
- Part number
- BD347
- Manufacturer
- INCHANGE
- File Size
- 180.89 KB
- Datasheet
- BD347-INCHANGE.pdf
- Description
- NPN Transistor
BD347 Description
isc Silicon NPN Power Transistor INCHANGE Semiconductor BD347 .
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min).
Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.
Good Lin.
BD347 Applications
* Designed for RF power and general-purpose audio amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
ICM
C
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