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BD582 PNP Transistor

BD582 Description

isc Silicon PNP Power Transistors INCHANGE Semiconductor BD582 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). Complement to Type BD581. Minimum Lot-to-Lot variations for robust device pe.

BD582 Applications

* Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A

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Datasheet Details

Part number
BD582
Manufacturer
INCHANGE
File Size
235.53 KB
Datasheet
BD582-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE BD582-like datasheet