Datasheet4U Logo Datasheet4U.com

BD582 PNP Transistor

📥 Download Datasheet  Datasheet Preview Page 1

Description

isc Silicon PNP Power Transistors INCHANGE Semiconductor BD582 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). Complement to Type BD581. Minimum Lot-to-Lot variations for robust device pe.

📥 Download Datasheet

Preview of BD582 PDF
datasheet Preview Page 2

Datasheet Specifications

Part number
BD582
Manufacturer
INCHANGE
File Size
235.53 KB
Datasheet
BD582-INCHANGE.pdf
Description
PNP Transistor

Applications

* Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A

BD582 Distributors

📁 Related Datasheet

📌 All Tags

INCHANGE BD582-like datasheet