BD609 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor BD609 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Complement to Type BD610. 100% avalanche tested. Minimum Lot-to-Lot variat.

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BD609 Datasheet Preview — Preview of BD609 PDF

Datasheet Specifications

Part number: BD609
Manufacturer: INCHANGE
File Size: 196.61 KB
Datasheet: BD609-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collect

BD609 Distributors

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BD609 NPN Transistor INCHANGE

INCHANGE BD609-like datasheet