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BD636 Datasheet - INCHANGE

BD636 Silicon PNP Power Transistor

*DC Current Gain - : hFE = 40(Min.)@ IC= -25mA *Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) *Complement to Type BD635 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for amplifier and switching application.

BD636-INCHANGE.pdf

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Datasheet Details

Part number:

BD636

Manufacturer:

INCHANGE

File Size:

191.29 KB

Description:

Silicon pnp power transistor.

BD636 Distributor

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BD636 BD636 Silicon PNP Power Transistor INCHANGE