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BD636 - Silicon PNP Power Transistor

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Datasheet Details

Part number BD636
Manufacturer INCHANGE
File Size 191.29 KB
Description Silicon PNP Power Transistor
Datasheet download datasheet BD636 Datasheet
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Description

DC Current Gain - : hFE = 40(Min.)@ IC= -25mA Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) Complement to Type BD635 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for amplifier and switching applications.

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