BD636 - Silicon PNP Power Transistor

INCHANGE

BD636 Description

isc Silicon PNP Power Transistor BD636 .
DC Current Gain - : hFE = 40(Min. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min. Complement to Type BD635.

BD636 Applications

* Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current

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Datasheet Details

Part number: BD636
Manufacturer: INCHANGE
File Size: 191.29 KB
Datasheet: BD636-INCHANGE.pdf
Description: Silicon PNP Power Transistor

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Silicon PNP Power Transistor INCHANGE

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