Datasheet Details
- Part number
- BD636
- Manufacturer
- INCHANGE
- File Size
- 191.29 KB
- Datasheet
- BD636-INCHANGE.pdf
- Description
- Silicon PNP Power Transistor
BD636 Description
isc Silicon PNP Power Transistor BD636 .
DC Current Gain -
: hFE = 40(Min.
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min.
Complement to Type BD635.
BD636 Applications
* Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-2
A
ICM
Collector Current
📁 Related Datasheet
📌 All Tags