BD676 PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlington Power Transistor .
Collector. Emitter Breakdown Voltage. : V(BR)CEO = -45 V. DC Current Gain. : hFE = 750(Min) @ IC= -1. Compleme.

📥 Download Datasheet

BD676 Datasheet Preview — Preview of BD676 PDF

Datasheet Specifications

Part number: BD676
Manufacturer: INCHANGE
File Size: 184.98 KB
Datasheet: BD676-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current-

BD676 Distributors

📁 Related Datasheet

BD6761FS BD6762FV BD676A BD676AG BD676G BD67

📌 All Tags

BD676 PNP Transistor INCHANGE

INCHANGE BD676-like datasheet