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BD676 PNP Transistor

BD676 Description

isc Silicon PNP Darlington Power Transistor .
Collector. Emitter Breakdown Voltage. : V(BR)CEO = -45 V. DC Current Gain. : hFE = 750(Min) @ IC= -1. Compleme.

BD676 Applications

* Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current-

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Datasheet Details

Part number
BD676
Manufacturer
INCHANGE
File Size
184.98 KB
Datasheet
BD676-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE BD676-like datasheet