BD678 Datasheet - INCHANGE

BD678, PNP Transistor

isc Silicon PNP Darlington Power Transistor DESCRIPTION *Collector *Emitter Breakdown Voltage * : V(BR)CEO = -60 *DC Current Ga

Applications

* Designed for use as output devices in complementary general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-

BD678-INCHANGE.pdf