BD676A

PNP Transistor

INCHANGE

BD676A General Description

*Collector

*Emitter Breakdown Voltage

* : V(BR)CEO = -45 V
*DC Current Gain

* : hFE = 750(Min) @ IC= -2 A
*Complement to Type BD675A
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for use as output d.

BD676A Datasheet (185.35 KB)

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Datasheet Details

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BD676A

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INCHANGE

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185.35 KB

Description:

Pnp transistor.

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BD676A PNP Transistor INCHANGE

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BD676A General Description

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