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BD677 NPN Transistor

BD677 Description

isc Silicon NPN Darlington Power Transistor .
Collector. Emitter Breakdown Voltage. : V(BR)CEO = 60V. DC Current Gain. : hFE = 750(Min) @ IC= 1. Complement.

BD677 Applications

* Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Con

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Datasheet Details

Part number
BD677
Manufacturer
INCHANGE
File Size
184.89 KB
Datasheet
BD677-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BD677-like datasheet