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BD807 NPN Transistor

BD807 Description

isc Silicon NPN Power Transistor BD807 .
DC Current Gain - : hFE = 30(Min. Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min). Complement to Type BD808. Mi.

BD807 Applications

* Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collecto

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Datasheet Details

Part number
BD807
Manufacturer
INCHANGE
File Size
206.30 KB
Datasheet
BD807-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BD807-like datasheet