BD807 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor BD807 .
DC Current Gain - : hFE = 30(Min. Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min). Complement to Type BD808. Mi.

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Datasheet Specifications

Part number: BD807
Manufacturer: INCHANGE
File Size: 206.30 KB
Datasheet: BD807-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collecto

BD807 Distributors

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BD807 NPN Transistor INCHANGE

INCHANGE BD807-like datasheet