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BD810 PNP Transistor

BD810 Description

isc Silicon PNP Power Transistor .
DC Current Gain - : hFE =30@ IC= -2A. Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -80V(Min). Complement to Type BD809. Minimum.

BD810 Applications

* Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -80 VCEO Collector-Emitter Voltage -80 VEBO Emitter-Base Voltage -5 IC Collector Current-Co

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Datasheet Details

Part number
BD810
Manufacturer
INCHANGE
File Size
208.66 KB
Datasheet
BD810-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
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