BD809 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor BD809 .
DC Current Gain - : hFE =30@ IC= 2A. Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min). Complement to Type BD810. Minimum L.

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Datasheet Specifications

Part number: BD809
Manufacturer: INCHANGE
File Size: 206.21 KB
Datasheet: BD809-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 80 VCEO Collector-Emitter Voltage 80 VEBO Emitter-Base Voltage 5 IC Collector Current-Conti

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BD809 NPN Transistor INCHANGE

INCHANGE BD809-like datasheet