BD808 PNP Transistor

INCHANGE

BD808 Description

isc Silicon PNP Power Transistor .
DC Current Gain - : hFE =30@ IC= -2A. Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min). Complement to Type BD807. Minimum.

BD808 Applications

* Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Colle

📥 Download Datasheet

BD808 Datasheet Preview — Preview of BD808 PDF

Datasheet Details

Part number: BD808
Manufacturer: INCHANGE
File Size: 208.70 KB
Datasheet: BD808-INCHANGE.pdf
Description: PNP Transistor

📁 Related Datasheet

BD800M5WFP2-C - LDO Regulators (ROHM)
BD800M5WFPJ-C - LDO Regulators (ROHM)
BD800M5WHFP-C - LDO Regulators (ROHM)
BD801 - Plastic High Power Silicon NPN Transistor (Motorola Inc)
BD802 - Plastic High Power Silicon PNP Transistor (Motorola Inc)
BD809 - Plastic High Power Silicon Transistors (ON Semiconductor)
BD80C0AFPS - LDO Regulator (Rohm)
BD80FD0WFP2-E2 - 2A LDO Regulators (ROHM)

📌 All Tags

PNP Transistor INCHANGE

INCHANGE BD808-like datasheet

BD800 - PNP Transistor
BD807 - NPN Transistor
BD810 - PNP Transistor
BD825 - NPN Transistor
BD826 - PNP Transistor
BD827 - NPN Transistor