BD899 - NPN Transistor
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) *High DC Current Gain : hFE= 750(Min) @IC= 3A *Collector Power Dissipation- : PC= 70W@ TC= 25℃ *8 A Continuous Collector Current *Complement to Type BD900 *Minimum Lot-to-Lot variations for robust device performance a
