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BD899 Datasheet - INCHANGE

BD899 NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) *High DC Current Gain : hFE= 750(Min) @IC= 3A *Collector Power Dissipation- : PC= 70W@ TC= 25℃ *8 A Continuous Collector Current *Complement to Type BD900 *Minimum Lot-to-Lot variations for robust device performance a.

BD899-INCHANGE.pdf

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Datasheet Details

Part number:

BD899

Manufacturer:

INCHANGE

File Size:

207.89 KB

Description:

Npn transistor.

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BD899 BD899 NPN Transistor INCHANGE

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