BD899 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor BD899 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). High DC Current Gain : hFE= 750(Min) @IC= 3A. Collector Power Dissipation- : P.

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Datasheet Specifications

Part number: BD899
Manufacturer: INCHANGE
File Size: 207.89 KB
Datasheet: BD899-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 80 VCEO Collector-Emitter Voltage 80 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 8 IB Base Current-Conti

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BD899 NPN Transistor INCHANGE

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