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BD899A

NPN Transistor

BD899A General Description

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) *High DC Current Gain : hFE= 750(Min) @IC= 4A *Collector Power Dissipation- : PC= 70W@ TC= 25℃ *8 A Continuous Collector Current *Complement to Type BD900A *Minimum Lot-to-Lot variations for robust device performance .

BD899A Datasheet (207.90 KB)

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Datasheet Details

Part number:

BD899A

Manufacturer:

INCHANGE

File Size:

207.90 KB

Description:

Npn transistor.

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BD899A NPN Transistor INCHANGE

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