BDX53C NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BDX53C .
Collector-Emitter Sustaining Voltage- : VCEO(sus)= 100V(Min). High DC Current Gain : hFE= 750(Min) @IC= 3A. Low Collector Saturation Volt.

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Datasheet Specifications

Part number: BDX53C
Manufacturer: INCHANGE
File Size: 208.40 KB
Datasheet: BDX53C-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for general-purpose amplifier and low-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A

BDX53C Distributors

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BDX53C NPN Transistor INCHANGE

INCHANGE BDX53C-like datasheet