Datasheet4U Logo Datasheet4U.com

BDX53C NPN Transistor

BDX53C Description

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BDX53C .
Collector-Emitter Sustaining Voltage- : VCEO(sus)= 100V(Min). High DC Current Gain : hFE= 750(Min) @IC= 3A. Low Collector Saturation Volt.

BDX53C Applications

* Designed for general-purpose amplifier and low-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A

📥 Download Datasheet

Preview of BDX53C PDF
datasheet Preview Page 2

Datasheet Details

Part number
BDX53C
Manufacturer
INCHANGE
File Size
208.40 KB
Datasheet
BDX53C-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • BDX53CG - Plastic Medium-Power Complementary Silicon Transistors (ON Semiconductor)
  • BDX53 - NPN Epitaxial Silicon Transistor (Fairchild Semiconductor)
  • BDX53A - NPN Epitaxial Silicon Transistor (Fairchild Semiconductor)
  • BDX53B - Plastic Medium-Power Complementary Silicon Transistors (Motorola Inc)
  • BDX53BFP - SILICON POWER DARLINGTON TRANSISTOR (ST Microelectronics)
  • BDX53BG - Plastic Medium-Power Complementary Silicon Transistors (ON Semiconductor)
  • BDX53F - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS (STMicroelectronics)
  • BDX54 - PNP Epitaxial Silicon Transistor (Fairchild Semiconductor)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE BDX53C-like datasheet