BDY77 Datasheet, Transistor, INCHANGE

PDF File Details

Part number:

BDY77

Manufacturer:

INCHANGE

File Size:

200.90kb

Download:

📄 Datasheet

Description:

Npn transistor.

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min)

Low Collector-Emitter Saturation Voltage

Excel

BDY77 Application

• Applications
• Designed for high power audio, disk head positioners, linear amplifiers, switching regulators,solenoid drivers,and DC-DC conve

TAGS

BDY77

INCHANGE

📁 Related Datasheet

BDY71 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor BDY71 DESCRIPTION ·Continuous Collector Current-IC= 4A ·Collector Power Dissipation- : PC= 29W @TC= 25℃ ·Minimum Lo.

BDY71 - Bipolar NPN Device (Seme LAB)
BDY71 Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) Bipolar NPN Device in a Herme.

BDY71X - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor BDY71X DESCRIPTION ·Continuous Collector Current-IC= 4A ·Collector Power Dissipation- : PC= 29W @TC= 25℃ ·Minimum L.

BDY71X - Bipolar NPN Device (Seme LAB)
BDY71X Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) Bipolar NPN Device in a Herm.

BDY71X - SILICON PLANAR EPITAXIAL NPN TRANSISTOR (TT)
SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDY71X • High Power • Hermetic TO-66 Metal Package • Ideally suited for Switching and Amplifier Applications .

BDY72 - Bipolar NPN Device (Seme LAB)
BDY72 Dimensions in mm (inches). 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device in a Hermetical.

BDY72 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor BDY72 DESCRIPTION ·Contunuous Collector Current-IC= 3A ·Collector Power Dissipation- : PC= 25W @TC= 25℃ Collector-E.

BDY73 - Bipolar NPN Device (Seme LAB)
BDY73 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN .

BDY73 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=50-150@IC = 4A ·Collector-Emitter Saturation Voltage.

BDY74 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min.) ·Collector.