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BDY77 NPN Transistor

BDY77 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min). Low Collector-Emitter Saturation Voltage. Excellent Safe Operating Area.

BDY77 Applications

* Designed for high power audio, disk head positioners, linear amplifiers, switching regulators,solenoid drivers,and DC-DC converters or inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 120 V VEBO

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Datasheet Details

Part number
BDY77
Manufacturer
INCHANGE
File Size
200.90 KB
Datasheet
BDY77-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BDY77-like datasheet