BDY77 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min). Low Collector-Emitter Saturation Voltage. Excellent Safe Operating Area.

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Datasheet Specifications

Part number: BDY77
Manufacturer: INCHANGE
File Size: 200.90 KB
Datasheet: BDY77-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for high power audio, disk head positioners, linear amplifiers, switching regulators,solenoid drivers,and DC-DC converters or inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 120 V VEBO

BDY77 Distributors

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BDY77 NPN Transistor INCHANGE

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