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BU406 NPN Transistor

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Description

isc Silicon NPN Power Transistor BU406 .
High Voltage: VCEV= 400V(Min). Low Saturation Voltage- : VCE(sat)= 1. Minimum Lot-to-Lot variations for robust device per.

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Datasheet Specifications

Part number
BU406
Manufacturer
INCHANGE
File Size
207.53 KB
Datasheet
BU406-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 400 VCEV Collector-Emitter Voltage 400 VCEO Collector-Emitter Voltage 200 VEBO Emitter-Base Voltage 6 IC Collector Curr

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