BU806 Silicon NPN Darlington Power Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification BU806 .
High Voltage: VCEV= 400V(Min). Low Saturation Voltage- : VCE(sat)= 1. Designed for use in horizontal deflect.

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Datasheet Specifications

Part number: BU806
Manufacturer: INCHANGE
File Size: 82.48 KB
Datasheet: BU806-INCHANGE.pdf
Description: Silicon NPN Darlington Power Transistor

Applications

* Designed for use in horizontal deflection circuits in TV’s and CRT’s. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEV Collector-Emitter Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6V IC Collec

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BU806 Silicon NPN Darlington Power Transistor INCHANGE

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