BU941ZL Datasheet - INCHANGE

BU941ZL, NPN Transistor

isc Silicon NPN Darlington Power Transistor .
Built In Clamping Zener. High Operating Junction Temperature. Minimum Lot-to-Lot variations for robust device performance and reliable op.

Applications

* High ruggedness electric ignitions ABSOLUTE MAXIMUM RATINGS (T =25 aB B ℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 350 V VBEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current 1 A IBM

BU941ZL-INCHANGE.pdf