BUX67B Datasheet, Transistor, INCHANGE

PDF File Details

Part number:

BUX67B

Manufacturer:

INCHANGE

File Size:

203.64kb

Download:

📄 Datasheet

Description:

Npn transistor. *Contunuous Collector Current-IC= 2A *Power Dissipation-PD=35W @TC= 25℃ *Collector-Emitter Saturation Voltage- : VCE(sat)= 2.5V(Max)@

TAGS

BUX67B

INCHANGE

📁 Related Datasheet

BUX67 - Bipolar NPN Device (Seme LAB)
BUX67 Dimensions in mm (inches). 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device in a Hermetical.

BUX67 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistors DESCRIPTION ·Contunuous Collector Current-IC= 2A ·Power Dissipation-PD=35W @TC= 25℃ ·Collector-Emitter Saturation V.

BUX67A - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistors DESCRIPTION ·Contunuous Collector Current-IC= 2A ·Power Dissipation-PD=35W @TC= 25℃ ·Collector-Emitter Saturation V.

BUX67C - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistors DESCRIPTION ·Contunuous Collector Current-IC= 2A ·Power Dissipation-PD=35W @TC= 25℃ ·Collector-Emitter Saturation V.

BUX60 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Low Saturation Voltage ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for .

BUX60 - Bipolar NPN Device (Seme LAB)
.. BUX60 Dimensions in mm (inches). 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN D.

BUX61 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Low Saturation Voltage ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for .

BUX62 - SILICON NPN BIPOLAR TRANSISTOR (TT)
SILICON NPN BIPOLAR TRANSISTOR BUX62 • Hermetic TO66 Metal Package • Designed For Driver Circuits, Switching and Amplifier Applications • Screening Op.

BUX62 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Low Saturation Voltage ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for .

BUX63 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 325V(Min.) ·Fast Switching Speed ·High Reliabili.