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BUZ60B N-Channel MOSFET

BUZ60B Description

isc N-Channel Mosfet Transistor BUZ60B *.

BUZ60B Features

* 4.5A, 400V
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier Device
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION Designed for appl

BUZ60B Applications

* such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 400 V VG

📥 Download Datasheet

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Datasheet Details

Part number
BUZ60B
Manufacturer
INCHANGE
File Size
225.42 KB
Datasheet
BUZ60B-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE BUZ60B-like datasheet