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FKV660S

N-Channel MOSFET

FKV660S Features

* Drain Current

* ID= 60A@ TC=25℃

* Drain Source Voltage- : VDSS= 60V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 14mΩ(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* Designed for use i

FKV660S General Description


*Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 60 A IDM Drain Current-Single Pluse.

FKV660S Datasheet (249.86 KB)

Preview of FKV660S PDF

Datasheet Details

Part number:

FKV660S

Manufacturer:

INCHANGE

File Size:

249.86 KB

Description:

N-channel mosfet.

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FKV660S N-Channel MOSFET INCHANGE

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