MOS FET FKV560S (under development) Absolute Maximum Ratings (Ta=25ºC) Symbol Ratings VDSS 50 ± 20 VGSS ± 45 ID ± 135 ID (pulse) PD 60 (Tc=25ºC) Tch 150 Tstg 55 to +150 PW 100µs, duty 1% Unit V V A A W ºC ºC Electrical Characteristics Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD Test Conditions ID = 100µA, VGS = 0V VGS = +20V VGS = 20V VDS = 50V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 25A VGS = 10V, ID = 25A V.
