MOS FET FKV660S Absolute Maximum Ratings (Ta=25ºC) Symbol Ratings VDSS 60 VGSS +20, 10 ± 60 ID ± 180 ID(pulse) PD 60(Tc=25ºC) Tch 150 Tstg 40 to +150 PW 100µs, duty 1% Unit V V A A W ºC ºC Electrical Characteristics Symbol V(BR)DSS IGSS IDSS VTH Re (yfs) RDS(ON) Ciss Coss Crss t d(on) tr t d(off) tf VSD Test Conditions ID=100 µA, VGS=0V VGS =+20V VGS = 10V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=25A VGS=10V, ID=25A VDS=10V f=1.0MHz VGS=0V ID=25A VDD 12V RL=0.48Ω.
