MOS FET FKV660 (under development) Absolute Maximum Ratings (Ta=25ºC) Symbol VDSS VGSS ID ID (pulse) PD Tch Tstg PW Ratings 60 ± 20 ± 50 ± 150 Unit V V A A W ºC ºC Electrical Characteristics Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD Test Conditions ID = 100µA, VGS = 0V VGS = +20V VGS = 20V VDS = 60V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 25A VGS = 10V, ID = 25A VDS = 10V f = 1.0MHz VGS = 0V ID = 25A VDD 12V RL = 0..
