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FMR19N60ES N-Channel MOSFET

FMR19N60ES Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor FMR19N60ES *.

FMR19N60ES Features

* With TO-3PML packaging
* Maintains both low power loss andlow noise
* Very high commutation ruggedness
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operationz

FMR19N60ES Applications

* Switching applications
* DC-DC converters
* Uninterruptible power supply
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 19 IDM Drain Current-Single Pulsed 76 PD Total Dis

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Datasheet Details

Part number
FMR19N60ES
Manufacturer
INCHANGE
File Size
206.88 KB
Datasheet
FMR19N60ES-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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