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IPA60R360P7 Datasheet - INCHANGE

IPA60R360P7, N-Channel MOSFET

isc N-Channel MOSFET Transistor IPA60R360P7 *.
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IPA60R360P7-INCHANGE.pdf

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Datasheet Details

Part number:

IPA60R360P7

Manufacturer:

INCHANGE

File Size:

232.83 KB

Description:

N-Channel MOSFET

Features

* Drain-source on-resistance: RDS(on) ≤ 0.36Ω
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* High switching Power Supply
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 9 IDM Drain Current-Single Pulsed 26 PD Total Dissipation @TC=25℃ 22 Tj Max. Operating Junction Tem

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