IPA60R360P7 - N-Channel MOSFET
IPA60R360P7 Features
* Drain-source on-resistance: RDS(on) ≤ 0.36Ω
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* APPLICATIONS
* High switching Power Supply
* ABSOLUTE MAXIMUM RATINGS(Ta=2
