IPA60R099P6 N-Channel MOSFET

INCHANGE

Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA60R099P6 *.

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Datasheet Specifications

Part number: IPA60R099P6
Manufacturer: INCHANGE
File Size: 218.86 KB
Datasheet: IPA60R099P6-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* With TO-220F package
* Low input capacitance and gate charge
* Low gate input resistance
* Reduced switching and conduction losses
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ 37.9 24 A IDM Drain Current-Single Pulsed 109 A PD Total Diss

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IPA60R099P6 N-Channel MOSFET INCHANGE

INCHANGE IPA60R099P6-like datasheet