IPA60R125P6 Datasheet - INCHANGE

IPA60R125P6, N-Channel MOSFET

isc N-Channel MOSFET Transistor IPA60R125P6,IIPA60R125P6 *

Features

* Drain-source on-resistance: RDS(on) ≤0.125Ω (max)
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 30 IDM Drain Current-Single Pulsed 87 PD Total Dissipation @TC=25℃ 34 Tj Max.
Operating Junction Temperature 150 Tstg Storage Tem

IPA60R125P6-INCHANGE.pdf