Datasheet Details
- Part number
- IPA60R125P6
- Manufacturer
- INCHANGE
- File Size
- 240.80 KB
- Datasheet
- IPA60R125P6-INCHANGE.pdf
- Description
- N-Channel MOSFET
IPA60R125P6 Description
isc N-Channel MOSFET Transistor IPA60R125P6,IIPA60R125P6 *.
IPA60R125P6 Features
* Drain-source on-resistance:
RDS(on) ≤0.125Ω (max)
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
* DESCRITION
IPA60R125P6 Applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
30
IDM
Drain Current-Single Pulsed
87
PD
Total Dissipation @TC=25℃
34
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Tem
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