Datasheet Details
- Part number
- IPA60R199CP
- Manufacturer
- INCHANGE
- File Size
- 235.85 KB
- Datasheet
- IPA60R199CP-INCHANGE.pdf
- Description
- N-Channel MOSFET
IPA60R199CP Description
isc N-Channel MOSFET Transistor IPA60R199CP, IIPA60R199CP *.
IPA60R199CP Features
* Static drain-source on-resistance:
RDS(on) ≤0.199Ω
* High peak current capability
* Enhancement mode
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
IPA60R199CP Applications
* Hard switching SMPS topologies
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
16
IDM
Drain Current-Single Pulsed
51
PD
Total Dissipation @TC=25℃
34
Tj
Max. Operating Junction
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