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IPA60R520C6 N-Channel MOSFET

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Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA60R520C6 *.

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Datasheet Specifications

Part number
IPA60R520C6
Manufacturer
INCHANGE
File Size
218.40 KB
Datasheet
IPA60R520C6-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* With TO-220F package
* Low input capacitance and gate charge
* Low gate input resistance
* Reduced switching and conduction losses
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 8.1 A IDM Drain Current-Single Plused 22 A PD Total Dissipation @TC=25℃ 29 W Tj

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