IPA60R520C6
INCHANGE
218.40kb
N-channel mosfet.
TAGS
📁 Related Datasheet
IPA60R520C6 - MOSFET
(Infineon Technologies)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ C6 600V
600V CoolMOS™ C6 Power Transistor IPx60R520C6
Data Sheet
Rev. 2.2 Final
Powe.
IPA60R520CP - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a.
IPA60R520CP - Power Transistor
(Infineon)
CoolMOSTM Power Transistor
Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Q.
IPA60R520E6 - Power Transistor
(Infineon Technologies)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ E6 600V
600V CoolMOS™ E6 Power Transistor IPx60R520E6
Data Sheet
Rev. 2.2 Final
Powe.
IPA60R520E6 - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPA60R520E6
·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate .
IPA60R060C7 - MOSFET
(Infineon)
IPA60R060C7
MOSFET
600V CoolMOSª C7 Power Device
CoolMOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the .
IPA60R060P7 - Power-Transistor
(Infineon)
IPA60R060P7
MOSFET
600V CoolMOSª P7 Power Device
The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, d.
IPA60R060P7 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
IPA60R060P7
FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage
: VDSS= 600V(Min) ·Static Drain-Source O.
IPA60R080P7 - MOSFET
(Infineon)
IPA60R080P7
MOSFET
600V CoolMOSª P7 Power Device
The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, d.
IPA60R099C6 - MOSFET
(Infineon Technologies)
FGK@?L
FTcP[ GgXST KT\XR^]SdRc^a @XT[S ?UUTRc LaP]bXbc^a
=^^[FGKm =6
6**M =^^[FGKm =6 H^fTa LaP]bXbc^a CHx6*J099=6
>PcP KWTTc
Rev. 2.3 @X]P[
H^fTa FP].