Datasheet Details
- Part number
- IPA60R120P7
- Manufacturer
- INCHANGE
- File Size
- 235.16 KB
- Datasheet
- IPA60R120P7-INCHANGE.pdf
- Description
- N-Channel MOSFET
IPA60R120P7 Description
isc N-Channel MOSFET Transistor IPA60R120P7 *.
IPA60R120P7 Features
* Drain-source on-resistance:
RDS(on) ≤ 0.12Ω
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
IPA60R120P7 Applications
* High switching Power Supply
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
26
IDM
Drain Current-Single Pulsed
78
PD
Total Dissipation @TC=25℃
28
Tj
Max. Operating Junction Te
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