Datasheet4U Logo Datasheet4U.com

IPA90R1K2C3

N-Channel MOSFET

IPA90R1K2C3 Features

* Static drain-source on-resistance: RDS(on) ≤1.2Ω

* Enhancement mode

* Fast Switching Speed

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRIPTION

* High peak current capability

* Ultra low gate charge

IPA90R1K2C3 General Description


*High peak current capability
*Ultra low gate charge
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 900 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 5.1 IDM Drain Current-Single Pulsed 10 PD Total Dissipation @TC=25℃ 31 T.

IPA90R1K2C3 Datasheet (241.77 KB)

Preview of IPA90R1K2C3 PDF

Datasheet Details

Part number:

IPA90R1K2C3

Manufacturer:

INCHANGE

File Size:

241.77 KB

Description:

N-channel mosfet.

📁 Related Datasheet

IPA90R1K2C3 CoolMOS Power Transistor (Infineon Technologies)

IPA90R1K0C3 CoolMOS Power Transistor (Infineon Technologies)

IPA90R340C3 CoolMOS Power Transistor (Infineon Technologies)

IPA90R340C3 N-Channel MOSFET (INCHANGE)

IPA90R500C3 CoolMOS Power Transistor (Infineon Technologies)

IPA90R500C3 N-Channel MOSFET (INCHANGE)

IPA90R800C3 CoolMOS Power Transistor (Infineon Technologies)

IPA95R1K2P7 MOSFET (Infineon)

IPA95R450P7 MOSFET (Infineon)

IPA95R450P7 N-Channel MOSFET Transistor (Inchange Semiconductor)

TAGS

IPA90R1K2C3 N-Channel MOSFET INCHANGE

Image Gallery

IPA90R1K2C3 Datasheet Preview Page 2

IPA90R1K2C3 Distributor