IPB65R190C7 Datasheet, Mosfet, INCHANGE

IPB65R190C7 Features

• Mosfet
• Static drain-source on-resistance: RDS(on) ≤0.19Ω
• Enhancement mode
• Fast Switching Speed
• 100% avalanche tested
• Minimum Lot-to-Lot variations

PDF File Details

Part number:

IPB65R190C7

Manufacturer:

INCHANGE

File Size:

251.34kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Ultra low gate charge

High peak current capability

Improved transconductance

ABSOLUTE MAXIMUM RA

IPB65R190C7 Application

• Applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipmen

TAGS

IPB65R190C7

INCHANGE

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