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IPB65R190C7

N-Channel MOSFET

IPB65R190C7 Features

* Static drain-source on-resistance: RDS(on) ≤0.19Ω

* Enhancement mode

* Fast Switching Speed

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRIPTION

* Ultra low gate charge

* High peak current capability

IPB65R190C7 General Description


*Ultra low gate charge
*High peak current capability
*Improved transconductance
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 13 IDM Drain Current-Single Pulsed 49 PD To.

IPB65R190C7 Datasheet (251.34 KB)

Preview of IPB65R190C7 PDF

Datasheet Details

Part number:

IPB65R190C7

Manufacturer:

INCHANGE

File Size:

251.34 KB

Description:

N-channel mosfet.

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TAGS

IPB65R190C7 N-Channel MOSFET INCHANGE

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