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IPB65R190C7 Datasheet - INCHANGE

IPB65R190C7 N-Channel MOSFET

*Ultra low gate charge *High peak current capability *Improved transconductance *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 13 IDM Drain Current-Single Pulsed 49 PD To.

IPB65R190C7-INCHANGE.pdf

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Datasheet Details

Part number:

IPB65R190C7

Manufacturer:

INCHANGE

File Size:

251.34 KB

Description:

N-channel mosfet.

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IPB65R190C7 IPB65R190C7 N-Channel MOSFET INCHANGE

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