IPB65R190E6

Power Transistor

Infineon Technologies

IPB65R190E6 Features

* Extremely low losses due to very low FOM Rdson

* Qg and Eoss

* Very high commutation ruggedness

* Easy to use/drive

* JEDEC1) qualified, Pb-free plating, Halogen free Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC

IPB65R190E6 General Description

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide a.

IPB65R190E6 Datasheet (2.03 MB)

IPB65R190E6 Datasheet Preview — Preview of IPB65R190E6 PDF

Datasheet Details

Part number:

IPB65R190E6

Manufacturer:

Infineon ↗ Technologies

File Size:

2.03 MB

Description:

Power transistor.
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS™ E6 Power Transistor IPx65R190E6 Data Sheet Rev. 2.1, 2018-02-28 Fina.

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IPB65R190E6 Power Transistor Infineon Technologies

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IPB65R190E6 Features

IPB65R190E6 General Description

Datasheet Details

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Description:

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