IPB65R190E6 Datasheet, Transistor, Infineon Technologies

IPB65R190E6 Features

• Transistor
• Extremely low losses due to very low FOM Rdson
• Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• JEDEC1) qualified, Pb-free

PDF File Details

Part number:

IPB65R190E6

Manufacturer:

Infineon ↗ Technologies

File Size:

2.03MB

Download:

📄 Datasheet

Description:

Power transistor. CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pio

IPB65R190E6 Application

• Applications even more efficient, more compact, lighter, and cooler. Features
• Extremely low losses due to very low FOM Rdson
• Qg an

TAGS

IPB65R190E6

Infineon Technologies

📁 Related Datasheet

IPB65R190E6 - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor IPB65R190E6 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance .

IPB65R190C6 - Power Transistor (Infineon Technologies)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS™ C6 Power Transistor IPx65R190C6 Data Sheet Rev. 2.0, 2011-05-09 Fina.

IPB65R190C6 - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor IPB65R190C6 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance .

IPB65R190C7 - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C7 650V CoolMOS™ C7 Power Transistor IPB65R190C7 Data Sheet Rev. 2.1 Final Power Man.

IPB65R190C7 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPB65R190C7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.19Ω ·Enhancement mode ·Fast Switching Speed ·10.

IPB65R190CFD - CFD2 Power Transistor (Infineon Technologies)
#$ % &' '( )* + #$ , - #$ . #$ , #$ , #$ & 3 % 43 % 4% & 4 5 ,4 4 % 56 7 89 5 5 5 :3 % 4' : %5 % 48 55 % % 4% & .

IPB65R190CFD - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor IPB65R190CFD ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance.

IPB65R190CFDA - CFDA Power Transistor (Infineon Technologies)
#$% # ' (' & ) #$% 1 & 21 & 2& 2 3 * 2 2 & 34 5 67 3 3 3 81 & 2' 8& 3 & 26 33 & & 2& '& 23 8 &2 6 & 2 1 8 81 '&.

IPB65R110CFD - MOSFET (Infineon)
## $ %& & '( ) ## * + ## , ## * ## * ## % 2 $ 32 $ 3$ % 3 4 *3 3 $ 45 6 78 4 4 4 92 $ 3& 9 $4 $ 37 44 $ $ 3$ % &.

IPB65R110CFD - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263(D2PAK) packaging ·Ultra-fast body diode ·High speed switching ·Very high mutation ruggedness.