IPB65R125C7 Datasheet - Infineon

IPB65R125C7, MOSFET

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C7 650V CoolMOS™ C7 Power Transistor IPB65R125C7 Data Sheet Rev.2.0 Final Power .
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineo.

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IPB65R125C7-Infineon.pdf

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Datasheet Details

Part number:

IPB65R125C7

Manufacturer:

Infineon ↗

File Size:

1.75 MB

Description:

MOSFET

Features

* Increased MOSFET dv/dt ruggedness
* Better efficiency due to best in class FOM RDS(on)
* Eoss and RDS(on)
* Qg
* Best in class RDS(on) /package
* Easy to use/drive
* Pb-free plating, halogen free mold compound
* Qualified for industrial grade app

Applications

* according to JEDEC (J-STD20 and JESD22) Drain Pin 2, tab Gate Pin 1 Source Pin 3 Benefits
* Enabling higher system efficiency
* Enabling higher frequency / increased power density solutions
* System cost / size savings due to reduced cooling requirements
* Higher

IPB65R125C7 Distributors

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IPB65R125C7 MOSFET Infineon

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