Datasheet Details
- Part number
- IPB65R125C7
- Manufacturer
- Infineon ↗
- File Size
- 1.75 MB
- Datasheet
- IPB65R125C7-Infineon.pdf
- Description
- MOSFET
IPB65R125C7 Description
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C7 650V CoolMOS™ C7 Power Transistor IPB65R125C7 Data Sheet Rev.2.0 Final Power .
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineo.
IPB65R125C7 Features
* Increased MOSFET dv/dt ruggedness
* Better efficiency due to best in class FOM RDS(on)
* Eoss and RDS(on)
* Qg
* Best in class RDS(on) /package
* Easy to use/drive
* Pb-free plating, halogen free mold compound
* Qualified for industrial grade app
IPB65R125C7 Applications
* according to JEDEC (J-STD20 and JESD22)
Drain Pin 2, tab
Gate Pin 1
Source Pin 3
Benefits
* Enabling higher system efficiency
* Enabling higher frequency / increased power density solutions
* System cost / size savings due to reduced cooling requirements
* Higher
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